Notification:
We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Simulation analysis of the bipolar amplification induced by heavy-ion irradiation in double-gate MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Castellani-Coulie, K. ; UMR CNRS, Univ. de Provence, Marseille, France ; Munteanu, D. ; Autran, J.L. ; Ferlet-Cavrois, V.
more authors

The sensitivity to heavy ions of double-gate (DG) transistors is evaluated by numerical simulation and extensively compared with the response of single-gate (SG) partially-depleted and fully-depleted SOI devices. The study of bipolar amplification versus LET and track location shows that DG are less sensitive than SG with similar structure parameters. Moreover, in order to understand the downscaling impact on the DG sensitivity to heavy ions, the influence on the bipolar gain of various electrical and geometrical structure parameters is thoroughly analyzed.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:52 ,  Issue: 6 )