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Simulation analysis of the bipolar amplification induced by heavy-ion irradiation in double-gate MOSFETs

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6 Author(s)
K. Castellani-Coulie ; UMR CNRS, Univ. de Provence, Marseille, France ; D. Munteanu ; J. L. Autran ; V. Ferlet-Cavrois
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The sensitivity to heavy ions of double-gate (DG) transistors is evaluated by numerical simulation and extensively compared with the response of single-gate (SG) partially-depleted and fully-depleted SOI devices. The study of bipolar amplification versus LET and track location shows that DG are less sensitive than SG with similar structure parameters. Moreover, in order to understand the downscaling impact on the DG sensitivity to heavy ions, the influence on the bipolar gain of various electrical and geometrical structure parameters is thoroughly analyzed.

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IEEE Transactions on Nuclear Science  (Volume:52 ,  Issue: 6 )