Referenced Items are not available for this document.
Vertical InGaN-GaN light-emitting diodes (LEDs) epitaxial films were successfully fabricated on a 50-mm Si substrate using glue bonding and laser liftoff technology. A high-temperature stable organic film, rather than a solder metal, was used as the bonding agent. It was found that the light output of the vertical InGaN LED chip exceeded that of the conventional sapphire-substrate LEDs by about 20% at an injection current of 20 mA. The vertical InGaN LEDs operated at a much higher injection forward current (280 mA) than sapphire-substrate LEDs (180 mA). The radiation pattern of the vertical InGaN LEDs is more symmetrical than that of the sapphire-substrate LEDs. Furthermore, the vertical InGaN LEDs remain highly reliable after 1000 h of testing
Published in:
Photonics Technology Letters, IEEE
(Volume:18
,
Issue:
4
)
Date of Publication: Feb. 15, 2006
- Page(s):
- 613 - 615
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 8822158
- Digital Object Identifier :
- 10.1109/LPT.2006.870190
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 February 2006
- Issue Date :
- Feb. 15, 2006
- Sponsored by :
- IEEE Photonics Society
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