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A simple method is proposed to derive the junction temperature and the bias- and temperature-dependent thermal resistance of heterojunction bipolar transistors (HBTs) using a radio frequency (RF) signal. The method exploits the thermal dependence of the current gain of a transistor whose dissipated power is modified by applying an RF signal. The new method is used to derive the junction temperature and thermal resistance of a power HBT. The results are compared with state-of-the-art techniques.