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Low power 8-GHz ultra-wideband active balun

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2 Author(s)
Ta-Tao Hsu ; Dept. of Electron. Eng., National Chiao Tung Univ., Hsinchu ; Chien-Nan Kuo

A new low-power CMOS active balun is designed for ultra-wideband applications, using a pair of common-source NMOS and common-gate PMOS transistors. This balun gives an impedance transformation ratio of 1:2. Without compensation feedback, the circuit provides a differential signal within 2dB and 3deg of gain and phase imbalance, respectively, up to 8-GHz. Total power consumption is only 1.44 mW at the supply voltage of Vdd=1.2V, much less than 12 mW of the traditional active balun. This saves 88% of power. The circuit can be fully integrated in RFIC for low power and low cost

Published in:

Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on

Date of Conference:

18-20 Jan. 2006

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