By Topic

Low power frequency dividers in SiGe:C BiCMOS technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Li Wang ; IHP GmbH, Frankfurt, Germany ; Yao-Ming Sun ; J. Borngraeber ; A. Thiede
more authors

This paper reports a 71 GHz static and a 103 GHz regenerative dynamic frequency divider fabricated in 0.25 mum SiGe:C HBT technology with fT/fmax200 GHz. The static divider including the buffer works with a 3.5 V single supply voltage and consumes 140 mW with 42 mW for the master-slave flip-flop (FF). The high speed/power ratio makes it attractive for high-frequency wireless communication systems. The dynamic frequency divider operates from 24 GHz to 103 GHz with 5.2 V voltage supply and consumes 195 mW including the buffer with 41 mW for the divider core, and it can be applied at higher frequencies in low power millimeter wave systems

Published in:

Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Date of Conference:

18-20 Jan. 2006