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65-GHz receiver in SiGe BiCMOS using monolithic inductors and transformers

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3 Author(s)
Gordon, M.Q. ; Edward S. Rogers Sr. Dept. of ECE, Toronto Univ., Ont., Canada ; Terry Yao ; Voinigescu, S.P.

This paper describes a single-chip 65-GHz SiGe BiCMOS radio receiver IC which includes an LNA, a transformer balun, a downconversion mixer, an IF amplifier, and a 65-GHz VCO. The single-ended downconversion gain is 21 dB with an input compression point of -22 dBm. The DSB receiver noise figure is a record 12 dB for IF frequencies in the 0 to 2 GHz range. By employing only transformers and inductors as matching elements, the die area, which includes all pads, is 790 μm × 740 μm.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on

Date of Conference:

18-20 Jan. 2006