By Topic

Integration of ultra wide band high pass filter using high performance inductors in advanced high resistivity SOI CMOS technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

12 Author(s)
F. Gianesello ; STMicroelectronics, Crolles, France ; D. Gloria ; C. Raynaud ; C. Tinella
more authors

Among the numerous incoming new wireless standards, ultra wideband (UWB) systems are very attracting since they are able to transmit data over a wide spectrum of frequency bands with very low power and high data rates. The frequency band extends from 3.1 to 10.6 GHz. Consequently, parasitic capacitance and substrate losses will remain key parameters to achieve system requirement. In this work, the potential of STMicroelectronics 0.13 mum SOI CMOS technology using high resistivity substrate (HR) is discussed, in order to integrate RF filters. Techniques to improve SOI integrated inductors in term of quality factor and operation bandwidth were evaluated. Finally, an example of integrated filter suitable for 7-10.6 GHz UWB applications were provided and compared with equivalent bulk technology

Published in:

Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Date of Conference:

18-20 Jan. 2006