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Design and modeling of RF MEMS modules in silicon substrate for WiMAX applications

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1 Author(s)
P. Monajemi ; Jacket Micro Devices, Atlanta, GA, USA

This paper reports on design, electrical analysis and modeling, and process development for tunable RF MEMS modules including high-Q tunable capacitors and inductors, and analog tunable LC filters in silicon substrate for the 5.725-5.850 GHz license exempt band of IEEE 802.16 WiMAX technology. Electromagnetic analysis of the RF modules is performed in Ansoft HFSS and Sonnet to extract the parasitics into the circuit. The MEMS process is a two-metal surface micromachining to fabricate tunable capacitors and inductors on low-loss polymer on silicon wafers. Capacitors as large as 0.77 pF with Q of 220, gap size of 4 mum, and tuning range of 1.38:1 and inductors as big as 0.85 nH with Q of 80 are designed. The 4 mm2 MEMS bandpass filter has a frequency tuning range of 6.5%/10V

Published in:

Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Date of Conference:

18-20 Jan. 2006