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Characteristics of submicron MOS varactors

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2 Author(s)
Jenkins, K.A. ; IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA ; Ainspan, H.

An experimental study of the capacitive parameters of submicron accumulation-mode MOS varactors is reported. Varactors are studied as a function of channel length and width. As the device channels are scaled to smaller and smaller dimensions to achieve higher frequency circuits, the capacitance tuning range decreases because of a relative increase of fixed capacitance. At the same time, the Q-factor of the varactor increases, thus requiring the circuit designer to choose the best gate length to optimize both parameters.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on

Date of Conference:

18-20 Jan. 2006