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Investigation of AlGaAs/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

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3 Author(s)
Wen-Chua Liu ; Dept. of Electr. Eng., Nat. Chang-Kung Univ., Tainan, Taiwan ; Lour, Wen‐Shiung ; Yeong-Her Wang

A bipolar transistor with an i-Al0.5Ga0.5As/n+-GaAs superlattice emitter as both hole reflection barriers and electron tunneling barriers has been fabricated successfully. The AlGaAs/GaAs potential spike is eliminated by moving the heterointerface away from the emitter-base junction. Both the turn-on voltage of emitter-base and base-collector junctions are almost identical for the same current level. The room-temperature common-emitter current gain is over 60, and a collector-emitter offset voltage of 55 mV has been obtained with a base-to-emitter doping ratio of 10. Multiple differential negative resistance phenomena and different transistor operating regimes have been observed due to the tunneling effects in the AlGaAs/GaAs superlattice at 77 K. Calculated results are in agreement with experimental ones. Because of the existence of high peak-to-valley current ratios as well as current gain over 65, the SE-RTBT is suitable for multivalued logic circuit applications with relatively reduced complexity

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Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 10 )