By Topic

Characteristics of 0.8- and 0.2-μm gate length InxGa 1-xAs/In0.52Al0.48As/InP (0.53⩽x⩽0.70) modulation-doped field-effect transistors at cryogenic temperatures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
R. Lai ; Center for High-Frequency Microelectron., Michigan Univ., Ann Arbor, MI, USA ; P. K. Bhattacharya ; D. Yang ; T. L. Brock
more authors

The performance characteristics of InP-based pseudomorphic MODFETs with varying the In composition (0.53⩽x⩽0.70), which changes the strain in the channel, were studied. The temperature was varied in the range of 40-300 K, and the devices had gate lengths L g of 0.8 and 0.2 μm. The analysis predicts an increase in the intrinsic cutoff frequency with increasing In composition and decreasing temperature and gate length. Also, the analysis predicts that the increase in cutoff frequency with decreasing temperature is less significant with increasing In composition and decreasing gate length. Preliminary experimental results show that as In composition increases from 0.53 to 0.70, fT increases by 30-40%, and as the temperature decreases from 300 to 40 K, fT improves by 15-30%, both for 0.8- and 0.2-μm devices

Published in:

IEEE Transactions on Electron Devices  (Volume:39 ,  Issue: 10 )