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200-A/cm2 threshold current density 1.5-μm GaInAs/AlGaInAs strained-layer GRIN-SCH quantum-well laser diodes grown by OMCVD

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6 Author(s)
Kasukawa, A. ; Bell Commun. Res., Red Bank, NJ ; Bhat, R. ; Zah, C.E. ; Koza, M.A.
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Summary form only given. The authors report 1.5 μm GaInAs/AlGaInAs GRIN-SCH SL (strained layer) QW (quantum well) LDs (laser diodes) having both compressive and tensile strain in the well. They were grown by low-pressure organometallic chemical vapor deposition (OMCVD). Very low threshold current densities of 200 and 400 A/cm2 were obtained in tensile and compressive SL QW LDs, respectively. The characteristic temperatures were 60 K for a lattice-matched QW LD, 72 K for a compressive SL QW LD, and 50 K for a tensile SL QW LD. Lasing wavelengths were in the 1.5 μm range for all cases

Published in:

Electron Devices, IEEE Transactions on  (Volume:38 ,  Issue: 12 )

Date of Publication:

Dec 1991

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