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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:38 Issue:12 Help

Improved device performance and reliability of n-channel and p-channel MOSFETs with ultrathin gate oxides prepared by conventional furnace oxidation of Si in pure N2O ambient

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4 Author(s)
Lo, G.Q. ; Microelectron. Res. Center, Texas Univ., Austin, TX ; Ting, W. ; Ahn, J. ; Kwong, D.L.

Summary form only given. Ultrathin gate oxides prepared by rapid thermal oxidation of Si in pure N2O exhibit superior resistance to dopant penetration and electrical stressing as compared to pure SiO2. The improved performance and excellent reliability (on- and off-state) of both n- and p-MOSFETs with ultrathin (~60-Å) gate oxides were prepared by conventional furnace oxidation of Si in N2O. The results suggest that the N2 O oxide is a promising candidate for ultrathin gate dielectric technology for CMOS ULSI applications

Published in:
Electron Devices, IEEE Transactions on  (Volume:38 ,  Issue: 12 )

Date of Publication: Dec 1991

Page(s):
2710 - 2711
ISSN :
0018-9383
INSPEC Accession Number:
4093060
Digital Object Identifier :
10.1109/16.158739
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Dec 1991
Sponsored by :
IEEE Electron Devices Society

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