By Topic

High-gain resonant InGaAlAs/InGaAs heterojunction bipolar phototransistors grown by molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Dodabalapur, A. ; AT&T Bell Lab., Holmdel, NJ ; Chang, T.Y.

Summary form only given. Results obtained with two approaches that significantly enhance the gain and sensitivity of InP-based heterojunction phototransistors (HPTs) grown by molecular beam epitaxy (MBE) are described. The use of quaternary InGaAlAs (300 K, E g~1.08 eV) as the high-bandgap emitter layer improves the quality of the emitter-base interface and leads to high current gains, even at very low current levels. For heterojunction bipolar transistors (HBTs) with a circular (50-μm diameter) emitter, DC current gains of more than 9000 were obtained at a current density of 1000 A/cm2 . In the second approach to enhancing the gain and sensitivity of HPTs while keeping the absorbing layer thickness the same, a resonant structure in which the active layers are part of a Fabry-Perot cavity with the end reflectors being gold (which also serves as the emitter contact) and an InAlAs/InGaAlAs quarter-wave stack was designed

Published in:

Electron Devices, IEEE Transactions on  (Volume:38 ,  Issue: 12 )