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High-gain resonant InGaAlAs/InGaAs heterojunction bipolar phototransistors grown by molecular beam epitaxy

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2 Author(s)
Dodabalapur, A. ; AT&T Bell Lab., Holmdel, NJ ; Chang, T.Y.

Summary form only given. Results obtained with two approaches that significantly enhance the gain and sensitivity of InP-based heterojunction phototransistors (HPTs) grown by molecular beam epitaxy (MBE) are described. The use of quaternary InGaAlAs (300 K, E g~1.08 eV) as the high-bandgap emitter layer improves the quality of the emitter-base interface and leads to high current gains, even at very low current levels. For heterojunction bipolar transistors (HBTs) with a circular (50-μm diameter) emitter, DC current gains of more than 9000 were obtained at a current density of 1000 A/cm2 . In the second approach to enhancing the gain and sensitivity of HPTs while keeping the absorbing layer thickness the same, a resonant structure in which the active layers are part of a Fabry-Perot cavity with the end reflectors being gold (which also serves as the emitter contact) and an InAlAs/InGaAlAs quarter-wave stack was designed

Published in:

Electron Devices, IEEE Transactions on  (Volume:38 ,  Issue: 12 )

Date of Publication:

Dec 1991

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