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A new device structure and process flow for a low-leakage p-i-n diode-based integrated detector array

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4 Author(s)
W. Snoeys ; Center for Integrated Syst., Stanford Univ., CA ; J. Plummer ; S. Parker ; C. Kenney

Summary form only given. A device structure that makes it possible to integrate a one- or two-dimensional array of p-i-n diodes (providing one- or two-dimensional spatial resolution, respectively) with readout circuitry on the same high-resistivity substrate is presented. The spatial resolution is maximized by building the circuitry on top of the detecting elements, while avoiding loss of signal charge into the circuitry. A special gettering step to obtain low leakage in the p-i-n diodes is presented as well. The specific application for which this method was developed is a particle detector for high-energy physics, but many other applications are also possible

Published in:

IEEE Transactions on Electron Devices  (Volume:38 ,  Issue: 12 )