Cart (Loading....) | Create Account
Close category search window

The minority-carrier injection-controlled field-effect transistor (MICFET)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ajit, J.S. ; Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC ; Baliga, B.J. ; Tandon, S. ; Reisman, A.

Summary form only given. A three-terminal power field-effect transistor structure that has a switching speed close to that for the power MOSFET with 30% higher on-state current density is described. The device structure is similar to that for the power MOSFET with the addition of a floating injector region whose potential can be controlled by an integrated vertical DMOSFET. The n-channel MICFET structure was fabricated with a standard polysilicon gate DMOSFET process using 20-Ω-cm, 40-μm-thick epitaxial n-type layers grown on (0.02 Ω pd cm) n+ substrates. The devices had a p-base of 3 μm and an n+ source depth of 1 μm. The breakdown voltages of the MICFET and DMOSFET were both in excess of 500 V

Published in:

Electron Devices, IEEE Transactions on  (Volume:38 ,  Issue: 12 )

Date of Publication:

Dec 1991

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.