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The minority-carrier injection-controlled field-effect transistor (MICFET)

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4 Author(s)
Ajit, J.S. ; Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC ; Baliga, B.J. ; Tandon, S. ; Reisman, A.

Summary form only given. A three-terminal power field-effect transistor structure that has a switching speed close to that for the power MOSFET with 30% higher on-state current density is described. The device structure is similar to that for the power MOSFET with the addition of a floating injector region whose potential can be controlled by an integrated vertical DMOSFET. The n-channel MICFET structure was fabricated with a standard polysilicon gate DMOSFET process using 20-Ω-cm, 40-μm-thick epitaxial n-type layers grown on (0.02 Ω pd cm) n+ substrates. The devices had a p-base of 3 μm and an n+ source depth of 1 μm. The breakdown voltages of the MICFET and DMOSFET were both in excess of 500 V

Published in:

Electron Devices, IEEE Transactions on  (Volume:38 ,  Issue: 12 )

Date of Publication:

Dec 1991

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