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A novel SAL-PINSCH quantum-well laser structure for a pinched beam divergence

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6 Author(s)
Chen, Y.K. ; AT&T Bell Lab., Murray Hill, NJ ; Wu, M.C. ; Hong, M.H. ; Mannaerts, J.
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Summary form only given. An edge-emitting strained AlGaAs/InGaAs/GaAs quantum-well laser structure is reported. It has a periodic index separate confinement heterostructure (PINSCH) optical confinement layers for a small beam divergence and high output power. Preliminary measurements of AR/HR-coated self-aligned ridge waveguide lasers show a CW output power of up to 350 mW and a 20° transverse beam divergence at a 980-nm lasing wavelength. This low beam divergence results in a high coupling efficiency of 51% into single-mode fibers. The expanded optical field in PINSCH confinement layers significantly pinches the transverse beam divergence and increases the maximum output power

Published in:

Electron Devices, IEEE Transactions on  (Volume:38 ,  Issue: 12 )

Date of Publication:

Dec 1991

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