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Strained InGaAs-GaAs quantum-well lasers by impurity-induced disordering with very low threshold and moderate blue-shift

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5 Author(s)
W. X. Zou ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA ; J. L. Merz ; L. A. Coldren ; R. J. Fu
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Summary form only given. The authors report on strained InGaAs-QW impurity-induced disordering (IID) lasers having self-aligned structure with very low threshold current and moderate blue-shift of the lasing wavelength. The strained InGaAs-QW material employed was grown by MOCVD. The fabrication process is described. The authors believe that IID by Si diffusion is a very attractive approach for the fabrication of strained InGaAs-QW lasers

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IEEE Transactions on Electron Devices  (Volume:38 ,  Issue: 12 )