Referenced Items are not available for this document.
A newly developed gate/n- overlapped LDD MOSFET was investigated. The MOSFET was fabricated by an oblique rotating ion implantation technique. A formula for the impurity ion profile was derived to analyze the lowering of substrate current and improvement of the degradation caused by the hot-carrier effect of the MOSFET. It was proved that the impurity ion profile near the drain edge is remarkably graded in the directions along channel and toward substrate even just after the implantation, so that the maximum lateral electric field is relaxed as compared with conventional LDD MOSFETs. Also, the maximum point of the lateral electric field at the drain edge is located apart from the main path of the channel current
Published in:
Electron Devices, IEEE Transactions on
(Volume:38
,
Issue:
12
)
Date of Publication: Dec 1991
- Page(s):
- 2647 - 2656
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 4093031
- Digital Object Identifier :
- 10.1109/16.158686
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec 1991
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
