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Hot-carrier-induced interface state generation in submicrometer reoxidized nitrided oxide transistors stressed at 77 K

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2 Author(s)
Cable, J.S. ; TRW Microelectron. Center, Redondo Beach, CA, USA ; Woo, J.C.S.

The hot carrier degradation at 77 K of silicon MOSFETs fabricated with reoxidized nitrided oxide (ONO) gate dielectrics has been investigated. Measurements have been performed at both room and LN2 temperatures on n-channel FETs for both ONO and conventional SiO 2 films. It is found that the hot-carrier immunity of ONO transistors is substantially larger than that of conventional SiO2 devices, and that the degree of improvement is much larger at room temperature that an 77 K. While the interface state generation does increase dramatically as a result of 77-K stressing, the dominant degradation mechanism can be attributed to a large increase in the drain resistance of the device due to localized charge trapping at the drain side of the channel

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Electron Devices, IEEE Transactions on  (Volume:38 ,  Issue: 12 )