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AlGaInP visible laser diodes with heavily Be-doped cladding layer grown by gas source molecular beam epitaxy

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7 Author(s)
Takamori, A. ; Matsushita Res. Inst. Tokyo Inc., Kawasaki, Japan ; Idota, K. ; Uchiyama, K. ; Suzuki, T.
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The successful room temperature continuous wavelength operation of an index guided GaInP/AlGaInP double heterostructure laser diode ( lambda =670 nm) has been achieved for the first time by using the combination of gas source molecular beam epitaxy with metal organic vapour phase epitaxy. The laser diodes show threshold currents of approximately 60 mA at 25 degrees C, and high characteristic temperatures of approximately 130 K. The maximum lasing temperature was 65 degrees C.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 18 )

Date of Publication:

27 Aug. 1992

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