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High-power 808-nm tapered diode lasers with nearly diffraction-limited beam quality of M/sup 2/=1.9 at P=4.4 W

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5 Author(s)
Dittmar, F. ; Optoelectronics Dept., Ferdinand-Braun-Inst., Berlin ; Sumpf, B. ; Fricke, J. ; Erbert, G.
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High-power 808-nm tapered diode lasers mounted as single emitters with very good brightness were manufactured and analyzed. The beam propagation ratio M2 is 1.9 at 4.4 W; a very low beam propagation ratio M2 of 1.3 is achieved at 3.9 W. At 808 nm, the high brightness of 460 MWmiddotcm-2 sr-1 never reported before is a step forward toward new applications of tapered diode lasers

Published in:

Photonics Technology Letters, IEEE  (Volume:18 ,  Issue: 4 )

Date of Publication:

Feb. 15, 2006

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