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Self-organised quantum dots as dislocation filters: the case of GaAs-based lasers on silicon

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4 Author(s)
Mi, Z. ; Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA ; Yang, J. ; Bhattacharya, P. ; Huffaker, D.L.

The use of multiple layers of self-organised InAs quantum dots as a very effective dislocation filter is demonstrated. In0.5Ga0.5As/GaAs quantum dot lasers grown directly on silicon substrates with the InAs quantum dot buffer layer exhibit substantially reduced threshold currents (Jth∼900 A/cm2), compared to devices grown on silicon without the dot buffer layer (Jth≥1500 A/cm2).

Published in:

Electronics Letters  (Volume:42 ,  Issue: 2 )