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Gate-induced barrier field effect transistor (GBFET) - a new thin film transistor for active matrix liquid crystal display systems

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2 Author(s)
Kumar, M.J. ; Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India ; Orouji, A.A.

Using two-dimensional simulation, we report a new gate-induced barrier field effect transistor (GBFET) which exhibits at least three orders of magnitude less OFF state leakage current when compared to a conventional poly-Si TFT. We demonstrate that the GBFET is completely free of pseudo-subthreshold conduction making it a very attractive device for active matrix liquid crystal display systems.

Published in:

VLSI Design, 2006. Held jointly with 5th International Conference on Embedded Systems and Design., 19th International Conference on

Date of Conference:

3-7 Jan. 2006

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