By Topic

Design, fabrication, and characterization of low forward drop, low leakage, 1-kV 4H-SiC JBS rectifiers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Lin Zhu ; Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA ; Chow, T.P. ; Jones, K.A. ; Agarwal, A.

The 1-kV 4H-SiC planar junction barrier Schottky (JBS) rectifiers were designed, fabricated, and characterized. Different p+ implantation dosages and activation anneal methods were used to determine an optimum baseline process. Using the optimized process, the forward drop of our JBS rectifiers is <1.5 V while the reverse leakage current density is <1×10-5 A/cm-2. Blocking voltage>1 kV was achieved using a single-zone junction termination extension termination. It was shown experimentally that 4-μm p-type implantation window spacing gives an optimum tradeoff between forward drop voltage and leakage current density for these rectifiers, yielding a specific on-resistance of 3 mΩ·cm2.

Published in:

Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 2 )