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The 1-kV 4H-SiC planar junction barrier Schottky (JBS) rectifiers were designed, fabricated, and characterized. Different p+ implantation dosages and activation anneal methods were used to determine an optimum baseline process. Using the optimized process, the forward drop of our JBS rectifiers is <1.5 V while the reverse leakage current density is <1×10-5 A/cm-2. Blocking voltage>1 kV was achieved using a single-zone junction termination extension termination. It was shown experimentally that 4-μm p-type implantation window spacing gives an optimum tradeoff between forward drop voltage and leakage current density for these rectifiers, yielding a specific on-resistance of 3 mΩ·cm2.