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Design, fabrication, and characterization of low forward drop, low leakage, 1-kV 4H-SiC JBS rectifiers

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4 Author(s)
Lin Zhu ; Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA ; Chow, T.P. ; Jones, K.A. ; Agarwal, A.

The 1-kV 4H-SiC planar junction barrier Schottky (JBS) rectifiers were designed, fabricated, and characterized. Different p+ implantation dosages and activation anneal methods were used to determine an optimum baseline process. Using the optimized process, the forward drop of our JBS rectifiers is <1.5 V while the reverse leakage current density is <1×10-5 A/cm-2. Blocking voltage>1 kV was achieved using a single-zone junction termination extension termination. It was shown experimentally that 4-μm p-type implantation window spacing gives an optimum tradeoff between forward drop voltage and leakage current density for these rectifiers, yielding a specific on-resistance of 3 mΩ·cm2.

Published in:

Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 2 )

Date of Publication:

Feb. 2006

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