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A compact model for SiGe HBT on thin-film SOI

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5 Author(s)
Fregonese, S. ; Lab. de Microelectronique IXL, CNRS UMR, Talence, France ; Avenier, G. ; Maneux, C. ; Chantre, A.
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Heterojunction bipolar transistor (HBT) fabrication on thin-film silicon-on-insulator (SOI) has been recently demonstrated. Due to the space volume constraint (thin film) for the device fabrication, the HBT structure is different from bulk HBT. In fact, compared to a bulk device, the buried layer has been suppressed and a lateral collector contact configuration is introduced. This device features a vertical expansion followed by a lateral expansion of the base-collector space charge region. This nonconventional charge behavior induces a kink in the base-collector junction capacitance characteristics, and as a consequence a modified Early effect. Furthermore, the low current transit time is modified compared to a bulk HBT. In this paper, all these effects are analyzed and a compact model for SOI-HBT is proposed. The model is validated on real SOI-HBTs with different collector doping levels.

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Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 2 )