Referenced Items are not available for this document.
A compact bipolar transistor model was presented in Part I that combines the simplicity of the SPICE Gummel-Poon model (SGPM) with some major features of HICUM. The new model, called HICUM/L0, is more physics-based and accurate than the SGPM but at the same time, from a computational point of view, suitable for simulating large circuits. In Part II, a parameter determination procedure is described and demonstrated for a variety of SiGe process technologies.
Published in:
Electron Devices, IEEE Transactions on
(Volume:53
,
Issue:
2
)
Date of Publication: Feb. 2006
- Page(s):
- 287 - 295
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 8739297
- Digital Object Identifier :
- 10.1109/TED.2005.862246
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 23 January 2006
- Issue Date :
- Feb. 2006
- Sponsored by :
- IEEE Electron Devices Society
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