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A computationally efficient physics-based compact bipolar transistor model for circuit Design-part II: parameter extraction and experimental results

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9 Author(s)
Fregonese, S. ; Chair of Electron Devices & Integrated Circuits, Dresden Univ. of Technol., Germany ; Lehmann, S. ; Zimmer, T. ; Schroter, M.
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A compact bipolar transistor model was presented in Part I that combines the simplicity of the SPICE Gummel-Poon model (SGPM) with some major features of HICUM. The new model, called HICUM/L0, is more physics-based and accurate than the SGPM but at the same time, from a computational point of view, suitable for simulating large circuits. In Part II, a parameter determination procedure is described and demonstrated for a variety of SiGe process technologies.

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Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 2 )