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A computationally efficient physics-based compact bipolar transistor model for circuit Design-part I: model formulation

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4 Author(s)
M. Schroter ; Dept. of Electr. Eng. & Inf. Technol., Dresden Univ. of Technol., Germany ; S. Lehmann ; S. Fregonese ; T. Zimmer

A compact bipolar transistor model is presented that combines the simplicity of the SPICE Gummel-Poon model (SGPM) with some major features of HICUM. The new model, called HICUM/L0, is more physics-based and accurate than the SGPM and at the same time, from a computational point of view, suitable for simulating large circuits. The new model has been implemented in Verilog-A and, as compiled code, in various commercial circuit simulators. In Part I, the fundamental model formulation is presented along with a derivation of the most important equations. Experimental results are shown in Part II.

Published in:

IEEE Transactions on Electron Devices  (Volume:53 ,  Issue: 2 )