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New fundamental insights into capacitance modeling of laterally nonuniform MOS devices

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6 Author(s)
Aarts, A.C.T. ; Philips Res. Labs., Eindhoven, Netherlands ; van der Hout, R. ; Paasschens, J.C.J. ; Scholten, A.J.
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In compact transistor modeling for circuit simulation, the capacitances of conventional MOS devices are commonly determined as the derivatives of terminal charges, which in their turn are obtained from the so-called Ward-Dutton charge partitioning scheme. For devices with a laterally nonuniform channel doping profile, however, it is shown in this paper that no terminal charges exist from which the capacitances can be derived. Instead, for such devices, a new model is presented for the capacitances themselves. Furthermore, a method is given to incorporate such a capacitance model into circuit simulators, which are traditionally based on terminal charge models. Comparison with two-dimensional device simulations and a segmentation model shows that for a constant mobility, the new capacitance model provides an accurate description for a MOSFET with a laterally diffused channel doping profile. Through a comparison with high-frequency measurements, the agreement between model and experimental results is discussed.

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Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 2 )