Referenced Items are not available for this document.
The harmonic distortion (HD) of MOSFETs operating in the triode regime is thoroughly investigated for the different device types of a multi-Vth deep-submicrometer 0.12-μm silicon-on-insulator (SOI) CMOS process. The measurements performed in a wide temperature range (25°C-220°C) and on devices with different oxide thicknesses and channel dopings help to identify the relative impact of the different physical mechanisms at the origin of HD. A measurement-based and design-oriented methodology is finally developed to compare device types, biases and configurations responding to practical design targets.
Published in:
Electron Devices, IEEE Transactions on
(Volume:53
,
Issue:
2
)
Date of Publication: Feb. 2006
- Page(s):
- 263 - 269
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 8739294
- Digital Object Identifier :
- 10.1109/TED.2005.861725
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 23 January 2006
- Issue Date :
- Feb. 2006
- Sponsored by :
- IEEE Electron Devices Society
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