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A nonvolatile memory programming approach using ohmic and Schottky well bias contacts is proposed. Programming efficiency using positive and negative bias voltages are compared in addition to electric field differences between the biases and type of contacts using experimental data and simulations. High-injection efficiency of electrons to the floating-gate is achieved using a negatively biased Schottky contact and a positively biased ohmic contact. A low-injection efficiency is achieved using a negatively biased ohmic contact and a positively biased Schottky contact.