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Dependence of self-heating effects on operation conditions and device structures for polycrystalline silicon TFTs

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5 Author(s)
Takechi, K. ; Technol. Res. Assoc. for Adv. Display Mater., Koganei, Japan ; Nakata, M. ; Kanoh, H. ; Otsuki, S.
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Self-heating, a degradation mechanism of n-channel poly-Si thin-film transistors (TFTs) due to bias stress, has been investigated. The aim of this work is to study this effect in depth to be able to propose a device structure designed to reduce it. The variation of the threshold voltage (Vt) shift with the stress-pulsewidth is related to the temperature rise due to the self-heating effect that depends on the stress-pulsewidth. Electron trapping in the oxide caused by the bias stress is considered to be enhanced by the TFT temperature rise owing to the self-heating. We show that copper-film-based TFTs, which have a substrate made of an extremely thin glass layer and a copper film exhibit much reduced self-heating and thus a decrease of Vt shift caused by the bias stress. These observations are interpreted using numerical simulations to estimate the temperature rise in the poly-Si channel region due to Joule heating.

Published in:

Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 2 )

Date of Publication:

Feb. 2006

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