By Topic

Theory of Raman-mediated pulsed amplification in silicon-wire waveguides

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Xiaogang Chen ; Microelectron. Sci. Labs., Columbia Univ., New York, NY, USA ; Panoiu, N.C. ; Osgood, R.M.

We present a comprehensive theoretical study of pulsed stimulated Raman scattering in silicon wires. The pulse dynamics is described by a system of coupled equations, which describes intrinsic waveguide optical losses, phase shift and losses due to free-carriers (FCs) generated through two-photon absorption (TPA), first- and second-order frequency dispersion, self-phase and cross-phase modulation, TPA losses, and the interpulse Raman interaction. Furthermore, the influence of the FCs on the pulse dynamics is incorporated through a rate equation. The corresponding system of equations has then been numerically integrated, and phenomena such as noise-seeded Raman amplification, pulsed Raman amplification, and Raman-mediated pulse interaction have been described.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:42 ,  Issue: 2 )