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Direct extraction of substrate network parameters for RF MOSFET modeling using a simple test structure

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3 Author(s)
Mahalingam, U. ; Inst. of Microelectron., Singapore, Singapore ; Rustagi, S.C. ; Samudra, G.S.

This letter presents a novel test structure to accurately extract the substrate network parameters for RF MOSFET modeling from two-port measurements. The test structure used in the common-gate configuration isolates the gate network to make the substrate network distinctly accessible to measurements. A methodology is developed to directly extract the substrate network from the measured data. The method is further verified and validated by the excellent match obtained between measured and simulated two-port parameters.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 2 )