Referenced Items are not available for this document.
Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (Tg) of >315° C and low coefficient of thermal expansion of <10 ppm/ ° C. Maximum process temperatures on the substrates were 250°C and 280°C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280°C have dc characteristics comparable to TFTs made on glass. The stability of the 250°C TFTs on clear plastic is approaching that of TFTs made on glass at 300°C-350°C. TFT characteristics and stability depend only on process temperature and not on substrate type.
Published in:
Electron Device Letters, IEEE
(Volume:27
,
Issue:
2
)
Date of Publication: Feb. 2006
- Page(s):
- 111 - 113
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 8840704
- Digital Object Identifier :
- 10.1109/LED.2005.863147
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 23 January 2006
- Issue Date :
- Feb. 2006
- Sponsored by :
- IEEE Electron Devices Society
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