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The 4H-SiC p-i-n diodes were designed, fabricated, and characterized for use in microwave applications. The diodes with mesa structure diameters between 80 and 150 μm, exhibited a blocking voltage of 1100 V, a 100-mA differential resistance of 1-2 /spl Omega/, a capacitance below 0.5 pF at a punchthrough voltage of 100 V and a carrier effective lifetime between 15-27 ns. X-band microwave switches based on 4H-SiC p-i-n diodes are demonstrated for the first time. The switches exhibited insertion loss as low as 0.7 dB, isolation up to 25 dB and were able to handle microwave power up to 2.2 kW in isolation mode and up to 0.4 kW in insertion mode.