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Improved electrical performance of erbium silicide Schottky diodes formed by Pre-RTA amorphization of Si

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5 Author(s)
E. J. Tan ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore ; K. L. Pey ; D. Z. Chi ; P. S. Lee
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Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height φBeff and ideality factor n due to the presence of silicide-induced microstructural defects which are likely sources of trap states. A method to improve the φBeff and n of the diodes utilizing in situ Ar plasma cleaning to induce a light amorphization of the Si(001) substrate is proposed. Even though the diodes formed in this way are less textured and have a poorer interface, they are free of silicide-induced microstructural defects, leading to an overall improvement in current transport and conduction properties which can be modeled using inhomogenous Schottky contact model.

Published in:

IEEE Electron Device Letters  (Volume:27 ,  Issue: 2 )