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Graded base type-II InP/GaAsSb DHBT with fT=475 GHz

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5 Author(s)
Snodgrass, W. ; Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA ; Bing-Ruey Wu ; Hafez, W. ; Keh-Yung Cheng
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The first demonstration of a type-II InP/GaAsSb double heterojunction bipolar transistor (DHBT) with a compositionally graded InGaAsSb to GaAsSb base layer is presented. A device with a 0.4×6 μm2 emitter dimensions achieves peak fT of 475 GHz (fmax=265 GHz) with current density at peak fT exceeding 12 mA/μm2. The structure consists of a 25-nm InGaAsSb/GaAsSb graded base layer and 65-nm InP collector grown by MBE with breakdown voltage /spl sim/4 V which demonstrates the vertical scaling versus breakdown advantage over type-I DHBTs.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 2 )