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A normally off GaN n-MOSFET with Schottky-barrier source and drain on a Si-auto-doped p-GaN/Si

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7 Author(s)
Heon-Bok Lee ; Nat. Educ. Center for Semicond. Technol., Kyungpook Nat. Univ., Daegu, South Korea ; Hyun-Ick Cho ; Hyun-Su An ; Young-Ho Bae
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We have fabricated an enhancement-mode n-channel Schottky-barrier-MOSFET (SB-MOSFET) for the first time on a high mobility p-type GaN film grown on silicon substrate. The metal contacts were formed by depositing Al for source/drain contact and Au for gate contact, respectively. Fabricated SB-MOSFET exhibited a threshold voltage of 1.65 V, and a maximum transconductance(gm) of 1.6 mS/mm at VDS=5V, which belongs to one of the highest value in GaN MOSFET. The maximum drain current was higher than 3 mA/mm and the off-state drain current was as low as 3 nA/mm.

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IEEE Electron Device Letters  (Volume:27 ,  Issue: 2 )