Skip to Main Content
We have fabricated an enhancement-mode n-channel Schottky-barrier-MOSFET (SB-MOSFET) for the first time on a high mobility p-type GaN film grown on silicon substrate. The metal contacts were formed by depositing Al for source/drain contact and Au for gate contact, respectively. Fabricated SB-MOSFET exhibited a threshold voltage of 1.65 V, and a maximum transconductance(gm) of 1.6 mS/mm at VDS=5V, which belongs to one of the highest value in GaN MOSFET. The maximum drain current was higher than 3 mA/mm and the off-state drain current was as low as 3 nA/mm.