By Topic

Raman amplification characteristics at 850 nm in a silica-based photonic crystal fiber

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Nakajima, K. ; NTT Access Network Service Syst. Labs., NTT Corp., Ibaraki ; Fukai, C. ; Kurokawa, K. ; Tajima, K.
more authors

We achieve a 2.5-dB improvement in the power penalty in a 10-Gb/s-based distributed Raman amplification transmission at 850 nm using a silica-based low-loss photonic crystal fiber (PCF). The experimental results agree well with a signal-to-noise ratio improvement model. The model indicates the negligible influence of double Rayleigh backscattering in the fabricated PCF

Published in:

Photonics Technology Letters, IEEE  (Volume:18 ,  Issue: 3 )