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Magnetic field sensors are needed for high-accuracy position, angle, force, strain, torque, and current flow measurements. Molecular beam epitaxy was used to grow tellurium-doped indium-gallium antimonide thin films. Hall effect sensors made from these films have been studied for their magnetic sensitivity and thermal stability. For a range of alloy composition near In0.8Ga0.2Sb and n-type doping levels near 2×1017 cm-3, high magnetic sensitivity from -40°C to +200°C was found with a resolution of better than ±0.5% over the entire temperature range.