By Topic

Simulation of a Ge-Si hetero-nanocrystal memory

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Dengtao Zhao ; Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA ; Yan Zhu ; Ruigang Li ; Jianlin Liu

The Ge/Si hetero-nanocrystal as a floating gate has been discussed and improved. The charge stored in the quantum well formed by SiO2-Ge-Si has to be thermally activated to the valence band of the Si nanocrystal before it can leak to the substrate which significantly reduces the leakage current from the charge storage node (nanocrystal) to the substrate. The simulation shows that the flash memory with Ge-Si (3 nm/3 nm) hetero-nanocrystal floating gates possesses a retention time of about ten years with a tunneling oxide of only 2 nm. Both writing and erasing speeds are fast in the Ge-Si hetero-nanocrystal memories, which is similar to that in the memory based on Si nanocrystals only.

Published in:

IEEE Transactions on Nanotechnology  (Volume:5 ,  Issue: 1 )