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On the power dependence of extraneous microwave fields in atomic frequency standards

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6 Author(s)
Jefferts, S.R. ; Div. of Time & Frequency, NIST, Boulder, CO, USA ; Shirley, J.H. ; Ashby, N. ; Heavner, T.P.
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We show that the frequency bias caused by distributed cavity phase has a strong dependence on microwave power. We also show that frequency biases associated with microwave leakage have distinct signatures in their dependence on microwave power and the physical location of the leakage interaction with the atom.

Published in:
Frequency Control Symposium and Exposition, 2005. Proceedings of the 2005 IEEE International

Date of Conference: 29-31 Aug. 2005

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