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Design and modeling of 4-bit slow-wave MEMS phase shifters

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2 Author(s)
Lakshminarayanan, B. ; Electr. Eng. Dept., Univ. of South Florida, Tampa, FL ; Weller, T.M.

A true-time-delay multibit microelectromechanical systems (MEMS) phase-shifter topology based on impedance-matched slow-wave coplanar-waveguide sections on a 500-mum-thick quartz substrate is presented. A semilumped model for the unit cell is derived and its equivalent-circuit parameters are extracted from measurement and electromagnetic simulation data. This unit cell model can be cascaded to accurately predict N-section phase-shifter performance. Experimental data for a 4.6-mm-long 4-bit device shows a maximum phase error of 5.5deg and S11 less than -21 dB from 1 to 50 GHz with worst case S21 less than -1.2 dB. In a second design, the slow-wave phase shifter was additionally loaded with MEMS capacitors to result in a phase shift of 257deg/dB at 50 GHz, while keeping S11 below -19 dB (with S21<-1.9 dB). The beams are actuated using high-resistance SiCr bias lines with typical actuation voltage around 30-45 V

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:54 ,  Issue: 1 )

Date of Publication:

Jan. 2006

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