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Millimeter-wave design considerations for power amplifiers in an SiGe process technology

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2 Author(s)
U. R. Pfeiffer ; IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA ; A. Valdes-Garcia

This paper describes a number of significant modeling considerations for SiGe heterojunction bipolar transistor power amplifiers operating at millimeter-wave frequencies. Small- and large-signal model-to-hardware correlation is presented for single transistor amplifiers, as well as for a combined dual-stage amplifier up to 65 GHz. The relevant parasitic effects are described along with the proposed modeling approach for each of them. The limits of the standard Vertical Bipolar Inter-Company device model at high-injection and their effect on the prediction of the achievable large-signal compression and power-added efficiency are also discussed.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:54 ,  Issue: 1 )