By Topic

Distortion in RF CMOS short-channel low-noise amplifiers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Baki, R.A. ; Microelectron. & Comput. Syst. Lab., McGill Univ., Montreal, Canada ; Tsang, T.K.K. ; El-Gamal, M.N.

An approach to estimate the distortion in CMOS short-channel (e.g. 0.18-μm gate length) RF low-noise amplifiers (LNAs), based on Volterra's series, is presented. Compact and accurate frequency-dependent closed-form expressions describing the effects of the different transistor parameters on harmonic distortion are derived. For the first time, the second-order distortion (HD2), in CMOS short-channel based LNAs, is studied. This is crucial for systems such as homodyne receivers. Equations describing third-order intermodulation distortion in RF LNAs are reported. The analytical analysis is verified through simulations and measured results of an 0.18-μm CMOS 5.8-GHz folded-cascode LNA prototype chip geared toward sub-1-V operation. It is shown that the distortion is independent of the gate-source capacitance Cgs of the MOS transistors, allowing an extra degree of freedom in the design of LNA circuits. Distortion-aware design guidelines for RF CMOS LNAs are provided throughout the paper.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:54 ,  Issue: 1 )