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Development of multiband phase shifters in 180-nm RF CMOS technology with active loss compensation

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3 Author(s)
Chao Lu ; Dept. of Electr. & Comput. Eng., Univ. of California, Davis, CA, USA ; A. -V. H. Pham ; D. Livezey

We present the design and development of a novel integrated multiband phase shifter that has an embedded distributed amplifier for loss compensation in 0.18-μm RF CMOS technology. The phase shifter achieves a measured 180° phase tuning range in a 2.4-GHz band and a measured 360° phase tuning range in both 3.5- and 5.8-GHz bands. The gain in the 2.4-GHz band varies from 0.14 to 6.6 dB during phase tuning. The insertion loss varies from -3.7 dB to 5.4-dB gain and -4.5 dB to 2.1-dB gain in the 3.5- and 5.8-GHz bands, respectively. The gain variation can be calibrated by adaptively tuning the bias condition of the embedded amplifier to yield a flat gain during phase tuning. The return loss is less than -10 dB at all conditions. The chip size is 1200 μm×2300 μm including pads.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:54 ,  Issue: 1 )