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Wafer level reliability and lifetime analysis of InGaAsP/InP quantum-well Fabry-Perot laser diode

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2 Author(s)
Jae-Ho Han ; Telecommun. Res. Lab., LG Cable Ltd., Anyang, South Korea ; Sung-Woong Park

This paper investigated the reliability of semiconductor 1.3-μm multiquantum-well (MQW) Fabry-Perot laser diodes (LDs) in a quarter 2-in wafer level that are measured to have uniform threshold currents, slope efficiencies, and wavelengths within 4% of the maximum deviation. By performing the accelerated aging test under a constant optical power of 3 mW at 85°C for 2100 h, the lifetime of the fabricated optoelectronic devices was estimated, where the failure rate was matched on the fitted line of the lognormal distribution model resulting in the mean-time-to-failure (MTTF) of 2×106 h operating at room temperature.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:5 ,  Issue: 4 )

Date of Publication:

Dec. 2005

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